Magnetic domain wall propagation under ferroelectric control
نویسندگان
چکیده
E. Mikheev,1 I. Stolichnov,1 E. De Ranieri,2 J. Wunderlich,2 H. J. Trodahl,3 A. W. Rushforth,4 S. W. E. Riester,1 R. P. Campion,4 K. W. Edmonds,4 B. L. Gallagher,4 and N. Setter1 1Ceramics Laboratory, EPFL-Swiss Federal Institute of Technology, Lausanne 1015, Switzerland 2Hitachi Cambridge Laboratory, JJ Thomson Avenue, Cambridge, CB3 0HE, United Kingdom 3MacDiarmid Institute for Advanced Materials and Nanotechnology, Victoria University, Wellington, New Zealand 4School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom (Received 11 September 2012; published 19 December 2012)
منابع مشابه
Towards Room - Temperature deterministic ferroelectric control of ferromagnetic thin films
The persisting demand of higher computing power and faster information processing keeps pushing scientists and engineers to explore novel materials and device structures. Within emerging functional materials, there is a focus on multiferroics materials and material-systems possessing both ferroelectric and ferromagnetic orders. Multiferroics with two order parameters coupled through a magnetoel...
متن کاملDomain wall propagation due to the synchronization with circularly polarized microwaves
Finding a new control parameter for magnetic domain wall DW motion in magnetic nanostructures is important in general and in particular for the spintronics applications. Here, we show that a circularly polarized magnetic field CPMF at gigahertz frequency microwave can efficiently drive a DW to propagate along a magnetic nanowire. Two motion modes are identified: rigid DW propagation at low freq...
متن کاملElectric-field control of magnetic domain wall motion and local magnetization reversal
Spintronic devices currently rely on magnetic switching or controlled motion of domain walls by an external magnetic field or spin-polarized current. Achieving the same degree of magnetic controllability using an electric field has potential advantages including enhanced functionality and low power consumption. Here we report on an approach to electrically control local magnetic properties, inc...
متن کاملDirect observation of ferroelectric domain switching in varying electric field regimes using in situ TEM.
In situ Transmission Electron Microscopy (TEM) techniques can potentially fill in gaps in the current understanding interfacial phenomena in complex oxides. Select multiferroic oxide materials, such as BiFeO(3) (BFO), exhibit ferroelectric and magnetic order, and the two order parameters are coupled through a quantum-mechanical exchange interaction. The magneto-electric coupling in BFO allows c...
متن کاملAthermal domain-wall creep near a ferroelectric quantum critical point.
Ferroelectric domain walls are typically stationary because of the presence of a pinning potential. Nevertheless, thermally activated, irreversible creep motion can occur under a moderate electric field, thereby underlying rewritable and non-volatile memory applications. Conversely, as the temperature decreases, the occurrence of creep motion becomes less likely and eventually impossible under ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2012